Dielectric Properties of Al/Poly (methyl methacrylate) (PMMA)/p-Si Structures at Temperatures Below 300 K

Dielectric properties of PbNb2O6 ferroelectric ceramics at cryogenic temperatures

Temperature - dependent dielectric properties of Au / Si 3 N 4 / n - Si ( metal insulator semiconductor ) structures ∗

The dielectric properties of Au/Si3N4/n-Si (MIS) structures are studied using the admittance measurements (C–V and G/ω–V ) each as a function of temperature in a range from 80 K to 400 K for two frequencies (100 kHz and 1 MHz). Experimental results show that both the dielectric constant (ε ′) and the dielectric loss (ε ′′) increase with temperature increasing and decrease with frequency increas...

Dynamics of poly(methyl methacrylate)–montmorillonite nanocomposites: A dielectric study

The effect of varying amounts of montmorillonite (MMT) filler (in weight ratios of 100/0, 100/5, and 100/10) on the molecular dynamics and polarization of atactic poly(methyl methacrylate) (PMMA) is investigated using broad-band dielectric spectroscopy from 10 −2 to 10 6 Hz and at temperatures from 30 to 140 °C. The experimental data were analyzed with the sum of Havriliak–Negami (HN) functions...

Characterization of various low-k dielectrics for possible use in applications at temperatures below 160 °C

This study aims at the testing of various low-k insulators deposited at temperatures below approximately 160 C for possible application in temperature-limited copper interconnects (e.g., in plastic electronics). Various polymers were tested such as the well-known poly(methyl methacrylate) (PMMA), a Polyhedral Oligomeric Silsesquioxane (POSS) based copolymer partially fluorinated (POSS-F) and th...

Studies on poly(methyl methacrylate) dielectric layer for field effect transistor: Influence of polymer tacticity

Electrical properties of three kinds of poly(methyl methacrylate) (PMMA) with different tacticity, i.e. isotactic(i), syndiotactic(s), and atatic(a), were investigated for the application in field effect transistor. Metal-insulator-silicon structures were fabricated via spin coating PMMA on heavily doped p-type silicon (p-Si) followed by evaporating gold electrode. The electrical characteristic...